HGTG11N120CN IGBT

Specification

Manufacturer: ON Semiconductor
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.1 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 43 A
Pd - Power Dissipation: 298 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: HGTG11N120CN
Packaging: Tube
Continuous Collector Current Ic Max: 43 A
Height: 20.82 mm
Length: 15.87 mm
Width: 4.82 mm
Brand: ON Semiconductor / Fairchild
Continuous Collector Current: 55 A
Gate-Emitter Leakage Current: +/- 250 nA
Product Type: IGBT Transistors