Specification

Type Designator: TK4A60DA
Marking Code: K4A60DA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 35 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.4 V
Maximum Drain Current |Id|: 3.5A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 11 nC
Rise Time (tr): 18 nS
Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm
Package: TO-220FP