Specification

Type Designator: FMP20N60S1FD
Marking Code: 20F60S1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 52 nC
Rise Time (tr): 27 nS
Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
Package: TO-220