Specification

Technology: Si    
Mounting Style: Through Hole    
Package / Case: TO-251-3    
Number of Channels: 1 Channel    
Transistor Polarity: N-Channel    
Vds - Drain-Source Breakdown Voltage: 500 V    
Id - Continuous Drain Current: 5.6 A    
Rds On - Drain-Source Resistance: 1.15 Ohms    
Vgs - Gate-Source Voltage: 30 V    
Vgs th - Gate-Source Threshold Voltage: 2 V    
Qg - Gate Charge: 25 nC    
Packaging: Reel    
Channel Mode: Enhancement        
Configuration: Single    
Fall Time: 45 ns    
Pd - Power Dissipation: 90 W    
Rise Time: 40 ns    
Factory Pack Quantity: 1875    
Transistor Type: 1 N-Channel    
Typical Turn-Off Delay Time: 90 ns     
Typical Turn-On Delay Time: 20 n