ماسفت IRFB4310 نوع N-channel پکیج TO-220

Specification

Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 140 A
Rds On - Drain-Source Resistance: 5.6 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 170 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 330 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Subcategory: Transistors
Transistor Type: 1 N-Channel