Specification

Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 64 A
Rds On - Drain-Source Resistance: 14 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Qg - Gate Charge: 54 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 130 W
Channel Mode: Enhancement
Brand: Infineon / IR
Configuration: Single
Fall Time: 50 ns
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 78 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 34 ns
Typical Turn-On Delay Time: 12 ns