Specification

Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 60 V
Collector- Base Voltage VCBO: 60 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 400 mV
Maximum DC Collector Current: 3 A
Pd - Power Dissipation: 30 W
Gain Bandwidth Product fT: 3 MHz
Maximum Operating Temperature: + 150 C
Packaging: Tube
Brand: onsemi / Fairchild
Continuous Collector Current: 3 A
DC Collector/Base Gain hfe Min: 60
DC Current Gain hFE Max: 300
Height: 9.4 mm
Length: 10.1 mm
Subcategory: Transistors
Technology: Si
Package / Case: TO-220-3