ماسفت IRF630 نوع N-Channel پکیج TO-220

Specification

Specification 
Product Category: MOSFET
Technology: Si
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 9 A
Rds On - Drain-Source Resistance: 400 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 31 nC
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 75 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Forward Transconductance - Min: 3 S
Height: 9.15 mm
Length: 10.4 mm
Product Type: MOSFET
Rise Time: 15 ns
Series: IRF630
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-On Delay Time: 10 ns
Width: 4.6 mm