ماسفت IRFB4115 نوع N-channel پکیج TO-220

Specification

Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 150 V
Id - Continuous Drain Current: 104 A
Rds On - Drain-Source Resistance: 9.3 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 5 V
Qg - Gate Charge: 77 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 380 W
Channel Mode: Enhancement
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 39 ns
Forward Transconductance - Min: 97 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFETs
Rise Time: 73 ns