Specification

Type Designator: FMW40N60S1HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 315
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 40 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 100 nC
Rise Time (tr): 24 nS
Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm