Specification

Product Category: MOSFET
RoHS: No
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 18 A
Rds On - Drain-Source Resistance: 180 mOhms
Vgs - Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Fall Time: 36 ns
Minimum Operating Temperature: - 55 C
Pd - Power Dissipation: 125 W
Rise Time: 51 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 14 ns
Width: 4.7 mm
Unit Weight: 6 g