Specification

Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 20.7 A
Rds On - Drain-Source Resistance: 190 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.1 V
Qg - Gate Charge: 87 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 208 W
Channel Mode: Enhancement
Tradename: CoolMOS
Packaging: Tube
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Series: CoolMOS C3
Transistor Type: 1 N-Channel
Width: 4.4 mm
Fall Time: 4.5 ns
Product Type: MOSFET
Rise Time: 5 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 67 ns
Typical Turn-On Delay Time: 10 ns