Specification

Technology: Si    
Mounting Style: Through Hole    
Package / Case: TO-220-3    
Number of Channels: 1 Channel    
Transistor Polarity: N-Channel    
Vds - Drain-Source Breakdown Voltage: 500 V    
Id - Continuous Drain Current: 8 A    
Rds On - Drain-Source Resistance: 850 mOhms    
Vgs - Gate-Source Voltage: 20 V    
Maximum Operating Temperature: + 150 C    
Packaging: Tube    
Channel Mode: Enhancement    
Brand: Vishay Semiconductors    
Configuration: Single    
Fall Time: 20 ns    
Height: 9.01 mm    
Length: 10.41 mm    
Minimum Operating Temperature: - 55 C    
Pd - Power Dissipation: 125 W    
Rise Time: 23 ns    
Factory Pack Quantity: 1000    
Transistor Type: 1 N-Channel    
Typical Turn-Off Delay Time: 49 ns    
Typical Turn-On Delay Time: 14 ns