Introduction

The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.

Specification 

Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 400 V
Collector- Base Voltage VCBO: 700 V
Emitter- Base Voltage VEBO: 9 V
Collector-Emitter Saturation Voltage: 1 V
Maximum DC Collector Current: 12 A
Pd - Power Dissipation: 12 W
Gain Bandwidth Product fT: 4 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Packaging: Tube
Continuous Collector Current: 12 A
DC Collector/Base Gain hfe Min: 8
Height: 9.28 mm
Length: 10.28 mm
Product Type: BJTs - Bipolar Transistors