Specification

Product Category: MOSFET    
Technology: Si    
Mounting Style: Through Hole    
Package / Case: TO-251-3    
Number of Channels: 1 Channel    
Transistor Polarity: N-Channel    
Vds - Drain-Source Breakdown Voltage: 600 V    
Id - Continuous Drain Current: 2 A    
Rds On - Drain-Source Resistance: 5 Ohms    
Vgs - Gate-Source Voltage: 30 V    
Maximum Operating Temperature: + 150 C    
Packaging: Tube    
Channel Mode: Enhancement    
Configuration: Single    
Fall Time: 24 ns    
Height: 6.22 mm    
Length: 6.73 mm    
Minimum Operating Temperature: - 55 C    
Pd - Power Dissipation: 44 W    
Rise Time: 21 ns    
Factory Pack Quantity: 750    
Transistor Type: 1 N-Channel