Specification
Product Category: MOSFET
Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels : 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current : 14 A
Rds On - Drain-Source Resistance:160 mOhms
Vgs - Gate-Source Voltage:20 V
Maximum Operating Temperature :+ 175 C
Minimum Operating Temperature : - 55 C
Fall Time : 24 ns
Height : 9.01 mm
Length : 10.41 mm
Pd - Power Dissipation : 88 W
Rise Time : 34 ns
Factory Pack Quantity : 1000
Transistor Type :1 N-Channel
Typical Turn-Off Delay Time : 23 ns
Typical Turn-On Delay Time : 10 ns