Specification
P/N : 2N7002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 mW
Drain-Source Voltage |Vds|: 60 V
Gate-Source Voltage |Vgs|: ± 20 V
Gate-Threshold Voltage |Vgs(V)|: 3 V
Drain Current |Id|: 280 mA
Package: SOT-23
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