Specification

Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 2 A
Rds On - Drain-Source Resistance: 4.7 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 12 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 54 W
Channel Mode: Enhancement
Tradename: QFET
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 28 ns
Forward Transconductance - Min: 5 S
Height: 16.3 mm
Length: 10.67 mm
Product Type: MOSFET
Rise Time: 25 ns
Series: FQP2N60C
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 24 ns
Typical Turn-On Delay Time: 9 ns
Width: 4.7 mm
Part # Aliases: FQP2N60C_NL