Specification 
Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole
Package / Case: TO-92-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 40 V
Collector- Base Voltage VCBO: 60 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 400 mV
Maximum DC Collector Current: 200 mA
Pd - Power Dissipation: 625 mW
Gain Bandwidth Product fT: 250 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Series: 2N3906
Brand: STMicroelectronics
Continuous Collector Current: 200 mA
DC Collector/Base Gain hfe Min: 30
DC Current Gain hFE Max: 300
Height: 4.95 mm
Length: 4.95 mm
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Technology: Si
Width: 3.94 mm