Specification

Manufacturer: Toshiba
Product Category: Bipolar Transistors - BJT
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 60 V
Collector- Base Voltage VCBO: 100 V
Emitter- Base Voltage VEBO: 7 V
Maximum DC Collector Current: 15 A
Pd - Power Dissipation: 115 W
Gain Bandwidth Product fT: 2.5 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 200 C
Series: 2N3055
Brand: Toshiba
DC Collector/Base Gain hFE Min: 20 at 4 A, 4 V
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors