Specification

Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 160 V
Collector- Base Voltage VCBO: 180 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 0.2 V
Maximum DC Collector Current: 0.6 A
Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: MMBT5551
DC Current Gain hFE Max: 250
Continuous Collector Current: 0.6 A
DC Collector/Base Gain hfe Min: 80
Pd - Power Dissipation: 350 mW
Product Type: BJTs - Bipolar Transistors