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Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 2.5 A
Rds On - Drain-Source Resistance: 56 mOhms
Vgs - Gate-Source Voltage: 8 V
Qg - Gate Charge: 5.4 nC
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 830 mW
Configuration: Single
Channel Mode: Enhancement
Height: 1 mm
Length: 3 mm
Product: MOSFET Small Signal
Transistor Type: 1 N-Channel
Width: 1.4 mm
Brand: Nexperia
Forward Transconductance - Min: 8 S
Fall Time: 34 ns
Product Type: MOSFET
Rise Time: 23 ns
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