Specification
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 400 V
Collector- Base Voltage VCBO: 700 V
Emitter- Base Voltage VEBO: 9 V
Collector-Emitter Saturation Voltage: 1.5 V
Maximum DC Collector Current: 3 A
Gain Bandwidth Product fT: 4 MHz
Maximum Operating Temperature: + 150 C
DC Current Gain hFE Max: 30
Brand: Taiwan Semiconductor
Continuous Collector Current: 3 A
DC Collector/Base Gain hfe Min: 4
Pd - Power Dissipation: 60 W
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