Product Category: Bipolar Transistors - BJT
Style: Through Hole
Package / Case: TO-92-3
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 200 V
Collector- Base Voltage VCBO: 200 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 0.4 V
Maximum DC Collector Current: 0.2 A
Pd - Power Dissipation: 625 mW
Gain Bandwidth Product fT: 50 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Technology: Si
Brand: Central Semiconductor
Continuous Collector Current: 0.45 A
DC Collector/Base Gain hfe Min: 25
Product Type: BJTs - Bipolar Transistors