Product Category: Bipolar Transistors - BJT Style: Through Hole Package / Case: TO-92-3 Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 200 V Collector- Base Voltage VCBO: 200 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter Saturation Voltage: 0.4 V Maximum DC Collector Current: 0.2 A Pd - Power Dissipation: 625 mW Gain Bandwidth Product fT: 50 MHz Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Technology: Si Brand: Central Semiconductor Continuous Collector Current: 0.45 A DC Collector/Base Gain hfe Min: 25 Product Type: BJTs - Bipolar Transistors