ماسفت IRF640 نوع N-Channel پکیج TO-220
Specification
Manufacturer:STMicroelectronics
P/N : 100N10F7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 30 W
Drain-Source Voltage |Vds|: 100 V
Gate-Source Voltage |Vgs|: ± 20 V
Gate-Threshold Voltage |Vgs(V)|: 4.5 V
Drain Current |Id|: 45 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 61 nC
Rise Time (tr): 40 nS
Maximum Drain-Source On-State Resistance (Rds): 8.0 mOhm
Package: TO-220FP
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