
ماسفت IRF830 پکیج TO-220
Specification
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 50 A
Rds On - Drain-Source Resistance: 40 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 300 W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 48 ns
Height: 20.7 mm
Length: 15.87 mm
Product Type: MOSFET
Rise Time: 60 ns
Transistor Type: 1 N-Channel