Specification 

Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole
Transistor Polarity: PNP
Technology: Si  
Series: BD136 
Collector- Emitter Voltage VCEO Max: 45 V
Collector- Base Voltage VCBO: 45 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 500 mV
Maximum DC Collector Current: 1.5 A
Pd - Power Dissipation: 1.25 W
Continuous Collector Current: - 1.5 A
DC Collector/Base Gain hfe Min: 25
DC Current Gain hFE Max: 250