Specification 

Type Designator: 2SD799
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 600
Noise Figure, dB: -
Package: TO220