Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole
Package / Case: TO-92-3
Transistor Polarity: PNP
Subcategory: Transistors
Technology: Si  
Collector- Emitter Voltage VCEO Max: 45 V
Collector- Base Voltage VCBO: 50 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 500 mA
Pd - Power Dissipation: 625 mW
Gain Bandwidth Product fT: 80 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
DC Current Gain hFE Max: 100 at 100 mA, 1 V
Product Type: BJTs - Bipolar Transistors