ماسفت IRFD220 نوع N-Channel
Specification
Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Vds - Drain-Source Breakdown Voltage: - 200 V
Id - Continuous Drain Current: 6.5 A
Rds On - Drain-Source Resistance: 800 mOhms
Vgs - Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Fall Time: 24 ns
Height: 9.01 mm
Length: 10.41 mm
Minimum Operating Temperature: - 55 C
Pd - Power Dissipation: 74 W
Rise Time: 27 ns
Factory Pack Quantity: 1000
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 28 ns
Typical Turn-On Delay Time: 12 ns
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