ماسفت IRF9Z24 نوع P-Channel پکیج TO-220
Specification
Type Designator: IPA60R080P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 29 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 37 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 51 nC
Rise Time (tr): 10 nS
Maximum Drain-Source On-State Resistance (Rds): 80 mOhm
Package: TO-220
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