Specification

Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 20 A
Rds On - Drain-Source Resistance: 270 mOhms
Vgs - Gate-Source Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C  
Fall Time: 58 ns
Pd - Power Dissipation: 280 W
Rise Time: 59 ns
Factory Pack Quantity: 500
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 110 ns
Typical Turn-On Delay Time: 18 ns