Specification 
Product Category: Bipolar Transistors - BJT
RoHS: Details
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: NPN
Marking code: ML3 / Y1
Collector- Emitter Voltage VCEO Max: 25 V
Collector- Base Voltage VCBO: 40 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 500 mV
Maximum DC Collector Current: 1.5 A
Pd - Power Dissipation: 300 mW
Gain Bandwidth Product fT: 100 MHz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 40
DC Current Gain hFE Max: 350
Product Type: BJTs - Bipolar Transistors