Specification 
K9F1G08U0C Features
Voltage Supply
3.3V Device(K9F1G08U0C) : 2.7V ~ 3.6V
Organization
Memory Cell Array : (128M + 4M) x 8bit
Data Register : (2K + 64) x 8bit
Automatic Program and Erase
Page Program : (2K + 64)Byte
Block Erase : (128K + 4K)Byte
Page Read Operation
Page Size : (2K + 64)Byte
Random Read : 25μs(Max.)
Serial Access : 25ns(Min.)
Fast Write Cycle Time
Page Program time : 200μs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
Endurance : TBD Program/Erase Cycles(with 1bit/512Byte ECC)
Data Retention : TBD
Command Driven Operation
Intelligent Copy-Back with internal 1bit/528Byte EDC
Unique ID for Copyright Protection