
ماسفت IRF830 نوع N-Channel پکیج TO-220
Specification
Type Designator: AP02N60P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 39 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 27 pF
Maximum Drain-Source On-State Resistance (Rds): 8 Ohm
Package: TO220