ماسفت FQP4N60C پکیج TO-220

Specification

Product Category: MOSFET

RoHS: Details

Technology: Si

Mounting Style: Through Hole

Package / Case: TO-220-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 600 V

Id - Continuous Drain Current: 4.4 A

Rds On - Drain-Source Resistance: 2.2 Ohms

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 106 W

Channel Mode: Enhancement

Brand: onsemi / Fairchild

Configuration: Single

Fall Time: 35 ns

Forward Transconductance - Min: 4 S

Height: 16.3 mm

Length: 10.67 mm

Product Type: MOSFET

Rise Time: 45 ns

Subcategory: MOSFETs

Transistor Type: 1 N-Channel

Type: MOSFET

Typical Turn-Off Delay Time: 25 ns

Typical Turn-On Delay Time: 13 ns

Width: 4.7 mm

Part # Aliases: FQP4N60C_NL