Product Category: Bipolar Transistors - BJT    
Mounting Style: Through Hole    
Transistor Polarity: NPN    
Collector- Emitter Voltage VCEO Max: 32 V    
Collector- Base Voltage VCBO: 40 V    
Emitter- Base Voltage VEBO: 5 V    
Maximum DC Collector Current: 2 A    
Gain Bandwidth Product fT: 150 MHz    
Maximum Operating Temperature: + 150 C   
Minimum Operating Temperature: - 55 C       
Continuous Collector Current: 1 A    
DC Collector/Base Gain hfe Min: 120    
DC Current Gain hFE Max: 390        
Pd - Power Dissipation: 1 W