Specification

Product Category: Bipolar Transistors - BJT
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: NPN
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Technology: Si  
Collector- Emitter Voltage VCEO Max: 65 V
Collector- Base Voltage VCBO: 80 V
Emitter- Base Voltage VEBO: 6 V
Maximum DC Collector Current: 100 mA
Pd - Power Dissipation: 310 mW
Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 200