ماسفت FQP4N60C نوع N-channel پکیج TO-220
Specification
Type Designator: FMH40N60S1FD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 315 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 40 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 104 nC
Rise Time (tr): 29 nS
Drain-Source Capacitance (Cd): 83 pF
Maximum Drain-Source On-State Resistance (Rds): 0.093 Ohm
امتیاز شما
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