Product Category: Bipolar Transistors - BJT Mounting Style: Through Hole Package / Case: TO-92-3 Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 45 V Collector- Base Voltage VCBO: 50 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 700 mV Maximum DC Collector Current: 800 mA Pd - Power Dissipation: 625 mW Gain Bandwidth Product fT: 210 MHz Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Continuous Collector Current: 800 mA DC Collector/Base Gain hfe Min: 100 DC Current Gain hFE Max: 630 Product Type: BJTs - Bipolar Transistors Subcategory: Transistors