ترانزیستور قابلمه ای 2N3055 نوع NPN

Specification

Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole
Package / Case: TO-3
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 60 V
Collector- Base Voltage VCBO: 100 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 1 V
Maximum DC Collector Current: 15 A
Pd - Power Dissipation: 115 W
Gain Bandwidth Product fT: 3 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 200 C
Brand: STMicroelectronics
Continuous Collector Current: 15 A
DC Collector/Base Gain hfe Min: 20
DC Current Gain hFE Max: 70
Product Type: BJTs - Bipolar Transistors