
ماسفت SG60N10P تایوانی مارک SiliconGear پکیج TO-220
Specification
Brand : Toshiba
P/N : K1K9A60F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: ±30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 3.7 A
Low drain-source on-resistance (Rِds) : 1.6 Ω
Ciss : 490 pF
Qg : 14 nC
Package: TO220FP