Specification

Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 49 A
Rds On - Drain-Source Resistance: 17.5 mOhms
Vgs - Gate-Source Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 94 W
Configuration: Single
Channel Mode: Enhancement
Height: 15.65 mm
Length: 10 mm
Transistor Type: 1 N-Channel
Type: HEXFET Power MOSFET
Width: 4.4 mm
Brand: Infineon / IR
Forward Transconductance - Min: 19 S
Fall Time: 45 ns
Product Type: MOSFET
Rise Time: 60 ns
Factory Pack Quantity: 100
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 44 ns
Typical Turn-On Delay Time: 12 ns
Unit Weight: 0.211644 oz